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●KK2000A1800V Y70KKE 国标型-快速晶闸管

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FEATURES
1). Interdigitated amplifying gates	IT(AV)	1827A
2). Fast turn-on and high di/dt	VDRM / VRRM	800~1800V
3). Low switching losses	tq	35~60μs
	ITSM	23 KA
	I2t	2645 103A2S
TYPICAL APPLICATIONS
1). Inductive heating
2). Electronic welders
3). Self-commutated inverters

 
THE MAIN PARAMETERS
 

SYMBOL	CHARACTERISTIC	TEST CONDITIONS	Tj(℃)	VALUE				UNIT
				Min	Type	Max
IT(AV)	Mean forward current	180O half sine wave 50Hz Double side cooled,Ths=55℃	125				1827	A
VDRM VRRM	Repetitive peak off-state voltage Repetitive peak reverse voltage	VDRM & VRRM,tp=10ms VDSM &VRSM= VDRM &VRRM+100V	125	800			1800	V
IDRM IRRM	Repetitive peak off-state current Repetitive peak reverse current	VDM=VDRM VRM= VRRM	125				160	mA
ITSM	Surge on-state current	10ms half sine wave, VR=0.6VRRM	125				23	KA
I2t	I2T for fusing coordination						2645	A2s*103
VTO	Threshold voltage		125				1.45	V
rT	Forward slop resistance						0.21	mΩ
VTM	Peak on-state voltage	ITM=4000A, F=35KN	125				2.29	V
dv/dt	Critical rate of rise of off-state voltage	VDM=0.67VDRM	125				500	V/μs
di/dt	Critical rate of rise of on-state current	VDM= 67%VDRM to 3000A, Gate pulse tr ≤0.5μs IGM=1.5A	125				1200	A/μs
Irm	Reverse recovery current	ITM=2000A, tp=1000μs, di/dt=-20A/μs, VR=50V	125		152			A
trr	Reverse recovery time				8.5			μs
Qrr	Recovery charge				646		700	μC
tq	Circuit commutated turn-off time	ITM=2000A,tp=1000μs, ,VR=50V dv/dt=-30V/μs,di/dt=-20A/μs	125	35			60	μs
IGT	Gate trigger current	VA=12V, IA=1A	25	40			450	mA
VGT	Gate trigger voltage			0.9			4.5	V
IH	Holding current			20			1000	mA
VGD	Non-trigger gate voltage	VDM=0.67VDRM	125	0.3				V
Rth(j-h)	Thermal resistance Junction to heatsink	At 180°sine, double side cooled Clamping force 35KN					0.016	℃ /W
Fm	Mounting force			30			40	KN
Tstg	Stored temperature			-40			140	℃
Wt	Weight				900			g
Size	Package box size	160×145×65						mm

 
PERFORMANCE CURVES FIGURE
 

Fig.1	Fig.2
Fig.3	Fig.4
Fig.5	Fig.6

 

 
 
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