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●KK1596A1900-2500V Y65KKG 国标型-快速晶闸管

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FEATURES
1). Interdigitated amplifying gates	IT(AV)	1596A
2). Fast turn-on and high di/dt	VDRM/ VRRM	1900~2500V
3). Low switching losses	tq	50~80μs
	ITSM	21 KA
	I2t	2205 103A2S
TYPICAL APPLICATIONS
1). Inductive heating
2). Electronic welders
3). Self-commutated inverters

 
THE MAIN PARAMETERS
 

SYMBOL	CHARACTERISTIC	TEST CONDITIONS	Tj(℃)	VALUE				UNIT
				Min	Type		Max
IT(AV)	Mean forward current	180O half sine wave 50Hz Double side cooled,Ths=55℃	125			1596		A
VDRM VRRM	Repetitive peak off-state voltage Repetitive peak reverse voltage	VDRM & VRRM,tp=10ms VDSM &VRSM= VDRM &VRRM+100V	125	1900		2500		V
IDRM IRRM	Repetitive peak off-state current Repetitive peak reverse current	VDM=VDRM VRM= VRRM	125			140		mA
ITSM	Surge on-state current	10ms half sine wave, VR=0.6VRRM	125			21		KA
I2t	I2T for fusing coordination					2205		A2s*103
VTO	Threshold voltage		125			1.48		V
rT	Forward slop resistance					0.2		mΩ
VTM	Peak on-state voltage	ITM=3000A, F=28.0KN	125			2.49		V
dv/dt	Critical rate of rise of off-state voltage	VDM=0.67VDRM	125			500		V/μs
di/dt	Critical rate of rise of on-state current	VDM= 67%VDRM to 2500A, Gate pulse tr ≤0.5μs IGM=1.5A	125			1000		A/μs
Irm	Reverse recovery current	ITM=1500A, tp=1000μs, di/dt=-20A/μs,VR=50V	125		118			A
trr	Reverse recovery time				6.85			μs
Qrr	Recovery charge				419	450		μC
tq	Circuit commutated turn-off time	ITM=1500A, tp=1000μs, ,VR=50V dv/dt=-30V/μs,di/dt=-20A/μs	125	50		50		μs
IGT	Gate trigger current	VA=12V, IA=1A	25	40		450		mA
VGT	Gate trigger voltage			0.9		4.5		V
IH	Holding current			20		800		mA
VGD	Non-trigger gate voltage	VDM=0.67VDRM	125	0.3				V
Rth(j-h)	Thermal resistance Junction to heatsink	At 180°sine, double side cooled Clamping force 28.0KN				0.017		℃ /W
Fm	Mounting force			27		34		KN
Tstg	Stored temperature			-40		140		℃
Wt	Weight				850			g
Size	Package box size	160×145×65						mm

 
PERFORMANCE CURVES FIGURE
 

Fig.1	Fig.2
Fig.3	Fig.4
Fig.5	Fig.6

OUTLINE