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●KK300A800-1600V Y30KKE 快速晶闸管

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FEATURES

1). Interdigitated amplifying gates
2). Fast turn-on and high di/dt
3). Low switching losses

	IT(AV)	426A
TYPICAL APPLICATIONS	VDRM / VRRM	800~1600V
1). Inductive heating	tq	24~50μs
2). Electronic welders	ITSM	4.3 KA
3). Self-commutated inverters	I2t	92 103A2S

 
THE MAIN PARAMETERS
 

SYMBOL	CHARACTERISTIC	TEST CONDITIONS	Tj(℃)	VALUE				UNIT
				Min	Type	Max
IT(AV)	Mean forward current	180O half sine wave 50Hz Double side cooled,Ths=55℃	125				426	A
VDRM VRRM	Repetitive peak off-state voltage Repetitive peak reverse voltage	VDRM & VRRM,tp=10ms VDSM &VRSM= VDRM &VRRM+100V	125	800			1600	V
IDRM IRRM	Repetitive peak off-state current Repetitive peak reverse current	VDM=VDRM VRM= VRRM	125				30	mA
ITSM	Surge on-state current	10ms half sine wave, VR=0.6VRRM	125				4.3	KA
I2t	I2T for fusing coordination						92	A2s*103
VTO	Threshold voltage		125				1.60	V
rT	Forward slop resistance						1.32	mΩ
VTM	Peak on-state voltage	ITM=1000A, F=7.0KN	125				2.92	V
dv/dt	Critical rate of rise of off-state voltage	VDM=0.67VDRM	125				500	V/μs
di/dt	Critical rate of rise of on-state current	VDM= 67%VDRM to 800A, Gate pulse tr ≤0.5μs IGM=1.5A	125				1000	A/μs
Irm	Reverse recovery current	ITM=500A, tp=1000μs, di/dt=-20A/μs,VR=50V	125		49			A
trr	Reverse recovery time				3.4			μs
Qrr	Recovery charge				83		100	μC
tq	Circuit commutated turn-off time	ITM=500A, tp=1000μs, ,VR=50V dv/dt=-30V/μs,di/dt=-20A/μs		24			50	μs
IGT	Gate trigger current	VA=12V, IA=1A	25	40			250	mA
VGT	Gate trigger voltage			0.9			2.5	V
IH	Holding current			20			400	mA
VGD	Non-trigger gate voltage	VDM=0.67VDRM	125	0.3				V
Rth(j-h)	Thermal resistance Junction to heatsink	At 180°sine, double side cooled Clamping force 7.0KN					0.055	℃ /W
Fm	Mounting force			5.3			10	KN
Tstg	Stored temperature			-40			140	℃
Wt	Weight				80			g
Size	Package box size	95×95×50						mm

PERFORMANCE CURVES FIGURE

Fig.1	Fig.2
Fig.3	Fig.4
Fig.5	Fig.6

 
OUTLINE