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KP1800A普通晶闸管Y55KPC

KP1800A普通晶闸管Y55KPC

FEATURES
 
1). Center amplifying gate
2). Metal case with ceramic insulator
3). Low on-state and switching losses
 
TYPICAL APPLICATIONS IT(AV) 1900A
1). AC controllers VDRM / VRRM 400~1000V
2). DC and AC motor control ITSM 29KA
3). Controlled rectifiers I2t 4205 103A2S
 
THE MAIN PARAMETERS
 
SYMBOL CHARACTERISTIC TEST CONDITIONS Tj() VALUE UNIT
Min Type Max
ITAV) Mean forward current 180O half sine wave 50Hz
Double side cooled,
Ths=55℃ 125     1900 A
Ths=60℃     1800
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM & VRRM,tp=10ms
VDSM &VRSM= VDRM &VRRM+100V
125 400   1000 V
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VDM=VDRM
VRM= VRRM
125     100 mA
ITSM Surge on-state current 10ms half sine wave,
VR=0.6VRRM
125     29 KA
I2t I2T for fusing coordination     4205 A2s*103
VTO Threshold voltage   125     0.88 V
rT Forward slop resistance     0.17
VTM Peak on-state voltage ITM=4000A, F=26.0KN 125     1.80 V
dv/dt Critical rate of rise of off-state voltage VDM=0.67VDRM 125     1000 V/μs
di/dt Critical rate of rise of on-state current VDM= 67%VDRM to 2500A,
Gate pulse tr ≤0.5μs IGM=1.5A
125     200 A/μs
Irm Reverse recovery current ITM=1500A, tp=1000μs,
di/dt=-20A/μs,VR=50V
125       A
trr Reverse recovery time       μs
Qrr Recovery charge       μC
IGT Gate trigger current VA=12V, IA=1A 25 40   300 mA
VGT Gate trigger voltage 0.8   3.0 V
IH Holding current 20   300 mA
VGD Non-trigger gate voltage VDM=0.67VDRM 125 0.3     V
Rth(j-h) Thermal resistance
Junction to heatsink
At 180°sine, double side cooled
Clamping force 26.0KN
      0.022 ℃ /W
Fm Mounting force     21   30 KN
Tstg Stored temperature     -40   140
Wt Weight       620   g
Size Package box size 160×145×65 mm

 
PERFORMANCE CURVES FIGURE
 

Fig.1

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