FEATURES
 
1). Center amplifying gate
2). Metal case with ceramic insulator
3). Low on-state and switching losses
 

TYPICAL APPLICATIONS	IT(AV)	872A
1). AC controllers	VDRM / VRRM	5600~6500V
2). DC and AC motor control	ITSM	11.8KA
3). Controlled rectifiers	I2t	696 103A2S

 
THE MAIN PARAMETERS
 

SYMBOL	CHARACTERISTIC	TEST CONDITIONS		Tj(℃)	VALUE				UNIT
					Min	Type	Max
ITAV)	Mean forward current	180O half sine wave 50Hz Double side cooled,	Ths=55℃	125				872	A
			Ths=75℃					700
VDRM VRRM	Repetitive peak off-state voltage Repetitive peak reverse voltage	VDRM & VRRM,tp=10ms VDSM &VRSM= VDRM &VRRM+100V		125	5500			6500	V
IDRM IRRM	Repetitive peak off-state current Repetitive peak reverse current	VDM=VDRM VRM= VRRM		125				200	mA
ITSM	Surge on-state current	10ms half sine wave, VR=0.6VRRM		125				11.8	KA
I2t	I2T for fusing coordination							696	A2s*103
VTO	Threshold voltage			125				1.25	V
rT	Forward slop resistance							1.03	mΩ
VTM	Peak on-state voltage	ITM=1000A, F=24.0KN		125				2.28	V
dv/dt	Critical rate of rise of off-state voltage	VDM=0.67VDRM		125				2000	V/μs
di/dt	Critical rate of rise of on-state current	VDM= 67%VDRM to1300A, Gate pulse tr ≤0.5μs IGM=1.5A		125				100	A/μs
Irm	Reverse recovery current	ITM=2000A, tp=1000μs, di/dt=-20A/μs,VR=50V		125				178	A
trr	Reverse recovery time							17.8	μs
Qrr	Recovery charge							1588	μC
IGT	Gate trigger current	VA=12V, IA=1A		25	40			300	mA
VGT	Gate trigger voltage				0.8			3.0	V
IH	Holding current				20			250	mA
VGD	Non-trigger gate voltage	VDM=0.67VDRM		125	0.3				V
Rth(j-h)	Thermal resistance Junction to heatsink	At 180°sine, double side cooled Clamping force 24.0KN						0.023	℃ /W
Fm	Mounting force				19			26	KN
Tstg	Stored temperature				-40			140	℃
Wt	Weight					560			g
Size	Package box size	95×95×50							mm