FEATURES
 
1). Center amplifying gate
2). Metal case with ceramic insulator
3). Low on-state and switching losses
 

TYPICAL APPLICATIONS	IT(AV)	376A
1). AC controllers	VDRM / VRRM	1100~1800V
2). DC and AC motor control	ITSM	4.65 KA
3). Controlled rectifiers	I2t	108 103A2S

 
THE MAIN PARAMETERS
 

SYMBOL	CHARACTERISTIC	TEST CONDITIONS		Tj(℃)	VALUE				UNIT
					Min	Type	Max
ITAV)	Mean forward current	180O half sine wave 50Hz Double side cooled,	Ths=55℃	125				376	A
			Ths=97℃					200
VDRM VRRM	Repetitive peak off-state voltage Repetitive peak reverse voltage	VDRM & VRRM,tp=10ms VDSM &VRSM= VDRM &VRRM+100V		125	1100			1800	V
IDRM IRRM	Repetitive peak off-state current Repetitive peak reverse current	VDM=VDRM VRM= VRRM		125				16	mA
ITSM	Surge on-state current	10ms half sine wave, VR=0.6VRRM		125				4.65	KA
I2t	I2T for fusing coordination							108	A2s*103
VTO	Threshold voltage			125				0.85	V
rT	Forward slop resistance							1.2	mΩ
VTM	Peak on-state voltage	ITM=770A, F=5.0KN		125				1.77	V
dv/dt	Critical rate of rise of off-state voltage	VDM=0.67VDRM		125				1000	V/μs
di/dt	Critical rate of rise of on-state current	VDM= 67%VDRM to 600A, Gate pulse tr ≤0.5μs IGM=1.5A		125				500	A/μs
Irm	Reverse recovery current	ITM=300A, tp=1000μs, di/dt=-20A/μs,VR=50V		125				100	A
trr	Reverse recovery time							12	μs
Qrr	Recovery charge							600	μC
IGT	Gate trigger current	VA=12V, IA=1A		25	30			200	mA
VGT	Gate trigger voltage				0.8				V
IH	Holding current				20				mA
VGD	Non-trigger gate voltage	VDM=0.67VDRM		125	0.3				V
Rth(j-h)	Thermal resistance Junction to heatsink	At 180°sine, double side cooled Clamping force 5.0KN						0.095	℃ /W
Fm	Mounting force				3.3			5.5	KN
Tstg	Stored temperature				-40			140	℃
Wt	Weight					55			g
Size	Package box size	95×95×50							mm

OUTLINE