FEATURES	TYPICAL APPLICATIONS
1). Center amplifying gate	). DC motor controls
2). Hermetic metal case with ceramic insulator	2). Controlled DC power supplies
(Also available with glass-metal seal up to 1200V)	3). AC controllers
3). International standard case TO-209AB (TO-93)
4). Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
5). Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
MAJOR RATINGS AND CHARACTERISTICS
Parameters KST230S Unit IF(AV)   230 A @ TC 85 ℃ IF(RMS)   360 A IFSM @ 50Hz 5700 A @ 60Hz 5970 A I2t @ 50Hz 163 KA2s @ 60Hz 143 KA2s VDRM/VRRM   400 to 1600 V Tq typical 100 μs TJ   40 to 125 ℃
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings

 

Type number	Voltage Code	VDRM/VRRM, maximum repetitive peak reverse voltage	VRSM, maximum non- repetitive peak reverse voltage	IDRM/IRRM max. @ TJ = TJ max
		V	V	mA
KST230S	04	400	500	30
	08	800	900
	12	1200	1300
	14	1400	1500
	16	1600	1700

2). Forward Conduction
 

Parameters		KST230S	Unit	Conditions
IT(AV)	Max. average forward current @ Case temperature	230	A	180° conduction, half sine wave
		85	℃
IT(RMS)	Max. RMS forward current	360	A	DC @ 78℃ case temperature
ITSM	Max. peak, one-cycle forward, non-repetitive surge current	5700	A	t = 10ms	No voltage	Sinusoidal half wave, Initial TJ = TJ max.
		5970		t = 8.3ms	reapplied
		4800		t = 10ms	100% VRRM
		5000		t = 8.3ms	reapplied
I2t	Maximum I2t for fusing	163	KA2s	t = 10ms	No voltage
		148		t = 8.3ms	reapplied
		115		t = 10ms	100% VRRM
		105		t = 8.3ms	reapplied
I2√t	Maximum I2√t for fusing	1630	KA2√S	t = 0.1 to 10ms, no voltage reapplied
VT(TO)1	Low level value of threshold voltage	0.92	V	(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VT(TO)2	High level value of threshold voltage	0.98		(I > π x IF(AV)), TJ = TJ max.
rt1	Low level value of forward slope resistance	0.88	mΩ	(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rt2	High level value of forward slope resistance	0.81		(I > π x IF(AV)), TJ = TJ max.
VTM	Max. forward voltage drop	1.55	V	IPK= 720A, TJ = TJ max, tp = 10ms sine pulse
IH	Maximum holding current	600	mA	TJ = 25°C, anode supply 12V resistive load
IL	Typical latching current	1000 (300)
di/dt	Max. rate of rise of turned-on current	1000	A/μs	Gate drive 20V, 20Ω, tr ≤ 1μs
	VDRM ≤ 600V			TJ = TJ max., anode voltage ≤ 80% VDRM
td	Typical reverse recovery time	1.0	μs	Gate current 1A, dig/dt= 1A/μs
				Vd = 0.67% V , T = 25℃VDRM, Tj =25℃
tq	Typical turn-off time	100		ITM= 175A, TJ = TJ max, di/dt = 20A/μs, VR= 50V
				dv/dt = 20V/μs, Gate 0V 100Ω, tp = 500μs
dv/dt	Max. critical rate of rise of	500	V/μs	TJ = TJ max. linear to 80% rated VDRM
	off-state voltage
IDRM	Max. peak reverse and off-state	30	mA	TJ = TJ max. rated VDRM/VRRM applied
IRRM	leakage current

3). Triggering

 

Parameters		KST230S		Unit	Conditions
PGM	Maximum peak gate power	10.0		W	TJ = TJ max.
PG(AV)	Maximum average gate power	2.0
IGM	Max. peak positive gate current	3.0		A	TJ = TJ max.
+VGM	Maximum peak negative gate voltage	20		V	TJ = TJ max.
-VGM	Maximum peak negative gate voltage	5.0
IGT	DC gate current required to trigger	TYP.	MAX.	mA		Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-to- cathode applied
		180	-		TJ = - 40℃
		90	150		TJ = - 25℃
		40	-		TJ = - 125℃
VGT	DC gate voltage required to trigger	2.9	-	V	TJ = - 40℃
		1.8	3.0		TJ = - 25℃
		1.2	-		TJ = - 125℃
IGD	DC gate current not to trigger	10		mA	TJ = TJ max.,	Max. gate current/ voltage not to trigger is the max. value which. will not trigger any unit with rated V DRM anode-to-cathode applied
VGD	DC gate voltage not to trigger	0.25		V	TJ = TJ max
TJ	Max. operating temperature range	- 40 to 125		℃
Tstg	Max. storage temperature range	- 40 to 150		℃
RthJC	Max. thermal resistance, junction to case	0.105		K/W	DC operation
RthCS	Max. thermal resistance, case to heatsink	0.04		K/W	Mounting surface, smooth, flat and greased
T	Mounting torque	31 (275)		Nm	Non-lubricated threads
		24.5 (210)		lbf-in	Lubricated threads
wt	Approximate weight	280		g (oz)
	Case style	TO-118			See Outline Table

 

ΔR_thJC Conduction
(The following table shows the increment of thermal resistence R_thJC when devices operate at different conduction angles than DC)

Conduction angle	Sinusoidal conduction	Rectangular conduction	Units	Conditions
180°	0.016	0.012	K/W	TJ = TJ max.
120°	0.019	0.020
90°	0.025	0.027
60°	0.036	0.037
30°	0.060	0.060

PERFORMANCE CURVES FIGURE

Fig.1 –CurrentRatings Characteristic	Fig.2 - CurrentRatings Characteristics
Fig.3 – On-state Power Loss Characteristics
Fig.4 – On-state Power Loss Characteristics
Fig.5 – Maximum Non-Repetitive Surge Current	Fig.6 – Maximum Non-Repetitive Surge Current
Fig.7 – On-state Power Loss Characteristics
Fig.8 –Thermal Impedance ZthJC Characteristics
Fig.9 –Gate Characteristics

  
OUTLINE