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●KST80S出口型-快速可控硅

KST80S出口型-快速可控硅

FEATURES TYPICAL APPLICATIONS
1). Center amplifying gate ). DC motor controls
2). Hermetic metal case with ceramic insulator 2). Controlled DC power supplies
   (Also available with glass-metal seal up to 1200V) 3). AC controllers
3). International standard case TO-209AB (TO-94)  
4). Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
5). Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
 
MAJOR RATINGS AND CHARACTERISTICS
Parameters KST80S Unit
IF(AV)   80 A
@ TC 85 ℃
IF(RMS)   360 A
IFSM @ 50Hz 5700 A
@ 60Hz 5970 A
I2t @ 50Hz 163 KA2s
@ 60Hz 143 KA2s
VDRM/VRRM   1400 to 1600 V
Tq typical 100 μs
TJ   40 to 125 ℃
 
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings

Type number Voltage Code VDRM/VRRM, maximum
repetitive peak
reverse voltage		 VRSM, maximum non-
repetitive peak
reverse voltage		 IDRM/IRRM max.
@ TJ = TJmax
    V V mA
KST80S 04 400 500 30
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
 
 
 2). Forward Conduction
 
Parameters 6F(R) Unit Conditions
IF(AV)
Max. average forward current
@ Case temperature
 6 A 180° conduction, half sine wave
160 ℃
IF(RMS) Max. RMS forward current 9.5 A  
PR
Maximum non-repetitive
peak reverse power
 4 K/W
10μs square pulse, TJ = TJ max.
see note *(2)
IFSM
Max. peak, one-cycle forward,
non-repetitive surge current
 159 A t = 10ms No voltage
Sinusoidal half wave,
Initial TJ = TJ max.
167 t = 8.3ms reapplied
134 t = 10ms 100% VRRM
141 t = 8.3ms reapplied
I2t Maximum I2t for fusing 127 A2s t = 10ms No voltage
116 t = 8.3ms reapplied
90 t = 10ms 100% VRRM
82 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1270 A2√S t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold voltage 0.63 V (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VF(TO)2 High level value of threshold voltage 0.86 (I > π x IF(AV)), TJ = TJ max.
Rf1 Low level value of forward slope resistance 15.7 mΩ (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
Rf2 High level value of forward slope resistance 5.6 (I > π x IF(AV)), TJ = TJ max.
VFM Max. forward voltage drop 1.10 V Ipk= 19A, TJ = 25℃, tp = 400μs rectangular wave
TJ Max. junction operating temperature range -65 to 175 ℃  
Tstg Max. storage temperature range -65 to 200
RthJC Max. thermal resistance, junction to case 2.5 K/W DC operation
RthCS Max. thermal resistance, case to heatsink 0.5 Nm Mounting surface, smooth, ?at and greased
T Mounting torque, ± 10% 1.2 (1.5)   Lubricated threads (Not lubricated threads)
wt Approximate weight 7 (0.25) g (oz)  
  Case style DO-4 See Outline Table
 
   
3). Triggering
 
Parameters KST80S Unit Conditions
PGM Maximum peak gate power 10.0 W TJ = TJ max.
PG(AV) Maximum average gate power 2.0
IGM Max. peak positive gate current 3.0 A TJ = TJ max.
+VGM Maximum peak negative gate voltage 20 V TJ = TJ max.
-VGM Maximum peak negative gate voltage 5.0    
IGT DC gate current required to trigger TYP. MAX. mA  
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
180 - TJ = - 40℃
90 150 TJ = - 25℃
40 - TJ = - 125℃
VGT DC gate voltage required to trigger 2.9 - V TJ = - 40℃
1.8 3.0 TJ = - 25℃
1.2 - TJ = - 125℃
IGD DC gate current not to trigger 10 mA TJ = TJ max.,
Max. gate current/ voltage
not to trigger is the max.
value which. will not trigger
any unit with rated V DRM
anode-to-cathode applied
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
TJ Max. operating temperature range - 40 to 125 ℃  
Tstg Max. storage temperature range - 40 to 125 ℃
RthJC Max. thermal resistance, junction to case 0.105 K/W DC operation
RthCS Max. thermal resistance, case to heatsink 0.04 K/W Mounting surface, smooth, flat and greased
T Mounting torque 31 (275) Nm Non-lubricated threads
24.5 (210) lbf-in Lubricated threads
wt Approximate weight 280 g (oz)  
  Case style TO-94 See Outline Table

 

ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.016 0.012 K/W TJ = TJmax.
120° 0.019 0.020
90° 0.025 0.027
60° 0.036 0.037
30° 0.060 0.060
 
  
 
PERFORMANCE CURVES FIGURE
Fig.1 –CurrentRatings Characteristic Fig.2 - CurrentRatings Characteristics
Fig.3 – On-state Power Loss Characteristics
Fig.4 – On-state Power Loss Characteristics
Fig.5 – Maximum Non-Repetitive Surge Current Fig.6 – Maximum Non-Repetitive Surge Current
Fig.7 – On-state Power Loss Characteristics
Fig.8 –Thermal Impedance ZthJC Characteristics
Fig.9 –Gate Characteristics
 
 
OUTLINE