FEATURES	TYPICAL APPLICATIONS
1). High current rating	1). Phase control applications in converters
2). Excellent dynamic characteristics	2). Lighting circuits
3). dv/dt = 1000V/μs option	3). Battery charges
4). Superior surge capabilities	4). Regulated power supplies and temperature
5). Standard package	and speed control circuit
6). Metric threads version available	5). Can be supplied to meet stringent military
7). Types up to 1600V VDRM/ VRRM	aerospace and other high-reliability
	requirements
MAJOR RATINGS AND CHARACTERISTICS
Parameters K40RIA Unit 10 to120 140 to160 IF(AV)   40 40 A @ TC 94 90 ℃ IF(RMS)   80 80 A IFSM @ 50Hz 1430 1200 A @ 60Hz 1490 1257 A I2t @ 50Hz 10.18 7.21 KA2s @ 60Hz 9.30 6.58 A2s VDRM/VRRM   100 to 1200 1400 to 1600 V Tq typical 110 μs TJ   - 40 to 125 ℃

ELECTRICAL SPECIFICATIONS
1). Voltage Ratings

Type number	Voltage Code	VDRM/VRRM, maximum repetitive peak reverse voltage *(1)	VRSM, maximum non- repetitive peak reverse voltage *(2)	IDRM/IRRM max. @ TJ = TJ max
		V	V	mA
K40RIA	10	100	150	15
	20	200	300
	40	400	500
	60	600	700
	80	800	900
	100	1000	1100
	120	1200	1300
	140	1400	1500
	160	1600	1700

*(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs
*(2) For voltage pulses with tp ≤ 5ms
 
 
2). Forward Conduction
 

Parameters		K40RIA		Unit	Conditions
		10to120	140to160
IT(AV)	Max. average forward current @ Case temperature	40	40	A	180° conduction, half sine wave
		94	90	℃
IT(RMS)	Max. RMS forward current	80	80	A
ITSM	Max. peak, one-cycle forward, non-repetitive surge current	1430	1200	A	t = 10ms	No voltage	Sinusoidal half wave, Initial TJ = TJ max.
		1490	1257		t = 8.3ms	reapplied
		1200	1010		t = 10ms	100% VRRM
		1255	1057		t = 8.3ms	reapplied
I2t	Maximum I2t for fusing	10.18	7.21	KA2s	t = 10ms	No voltage
		9.30	6.58		t = 8.3ms	reapplied
		7.20	5.10		t = 10ms	100% VRRM
		6.56	4.65		t = 8.3ms	reapplied
I2√t	Maximum I2√t for fusing	101.8	72.1	KA2√S	t = 0.1 to 10ms, no voltage reapplied
VT(TO)1	Low level value of threshold voltage	0.94	1.02	V	(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VT(TO)2	High level value of threshold voltage	1.08	1.17		(I > π x IF(AV)), TJ = TJ max.
rt1	Low level value of forward slope resistance	4.08	4.78	mΩ	(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rt2	High level value of forward slope resistance	3.34	3.97		(I > π x IF(AV)), TJ = TJ max.
VTM	Max. forward voltage drop	1.60	1.78	V	Ipk= 50A, TJ = 25℃ tp = 10ms sine pulse
IH	Maximum holding current	200		mA	TJ = 25°C, anode supply 12V resistive load
IL	Typical latching current	400
di/dt	Max. rate of rise of turned-on current			A/μs	TJ = TJ max., VDM = rated VDRM
	VDRM ≤ 600V	200			Gate pulse = 20V,15Ω, tp = 6μs,
	VDRM ≤ 1600V	100			tr = 0.1μs max.ITM = (2x rated di/dt) A
td	Typical reverse recovery time	0.9		μs	TC = 25℃ VDM = rated VDRM ITM = 10A dc
					resistive circuit Gate pulse = 10V, 15Ω
					source, tp = 20μs
tq	Typical turn-off time	110			TC = 125℃, ITM = 50A, reapplied dv/dt = 20V/μs dir/dt = -10A/μs, VR=50V
dv/dt	Max. critical rate of rise of	200			TJ = TJ max. linear to 100% rated VDRM
	off-state voltage	500 (*)			TJ = TJ max. linear to 67% rated VDRM

(*) t_q = 10μsup to 600V, t_q = 30μs up to 1600V available on special request.
(**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. K16RIA120S90
 
 
3). Triggering
 

Parameters		K40RIA	Unit	Conditions
PGM	Maximum peak gate power	10	W	TJ = TJ max.
PG(AV)	Maximum average gate power	2.5
IGM	Max. peak positive gate current	2.5	A	TJ = TJ max.
+VGM	Maximum peak negative gate voltage	20	V	TJ = TJ max.
-VGM	Maximum peak negative gate voltage	10
IGT	DC gate current required to trigger	250	mA	TJ = - 40℃	Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-to- cathode applied
		100		TJ = - 25℃
		50		TJ = - 125℃
VGT	DC gate voltage required to trigger	3.5		TJ = - 40℃
		2.5	V	TJ = - 25℃
IGD	DC gate current not to trigger	5.0	mA	TJ = TJ max.,	Max. gate current/ voltage not to trigger is the max. value which. will not trigger any unit with rated V DRM anode-to-cathode applied
				VDRM = rated value
VGD	DC gate voltage not to trigger	0.2	V	TJ = TJ max
TJ	Max. operating temperature range	- 40 to 125	℃
Tstg	Max. storage temperature range	- 40 to 125	℃
RthJC	Max. thermal resistance, junction to case	0.35	K/W	DC operation
RthCS	Max. thermal resistance, case to heatsink	0.25	K/W	Mounting surface, smooth, flat and greased
T	Mounting torque	2.8 (25)	Nm	Non-lubricated threads
		3.4 (30)	lbf-in
wt	Approximate weight	28 (1.0)	g (oz)
	Case style	TO-65		See Outline Table

 
ΔR_thJC Conduction
(The following table shows the increment of thermal resistence R_thJC when devices operate at different conduction angles than DC)

Conduction angle	Sinusoidal conduction	Rectangular conduction	Units	Conditions
180°	0.078	0.057	K/W	TJ= TJ max.
120°	0.094	0.098
90°	0.120	0.130
60°	0.176	0.183
30°	0.294	0.296

 
 
PERFORMANCE CURVES FIGURE

Fig.1 – CurrentRatings Characteristic	Fig.2 - CurrentRatings Characteristic
Fig.3 – On-state Power Loss Characteristics	Fig.4 – On-state Power Loss Characteristics
Fig.5 –Maximum Non-Repetitive Surge Current	Fig.6 –Maximum Non-Repetitive Surge Current
Fig.7 – Current Ratings Characteristics	Fig.8 – Current Ratings Characteristics
Fig.9 – On-state Power Loss Characteristics	Fig.10 – On-state Power Loss Characteristics
Fig.11 – Maximum Non-Repetitive Surge Current	Fig.12 – Maximum Non-Repetitive Surge Current
Fig.13 – Forward Voltage Drop Characteristics	Fig.14 – Forward Voltage Drop Characteristics
Fig.15 –Thermal Impedance ZthJC Characteristics
Fig.16 – Gatr Characteristics

 
 
OUTLINE