FEATURES	TYPICAL APPLICATIONS
1). Improved glass passivation for high reliability	1). Medium power switching
and exceptional stability at high temperature	2). Phase control applications
2). High di/dt and dv/dt capabilities	3). Can be supplied to meet stringent military
3). Standard package	aerospace and other high-reliability requirements
4). Low thermal resistance
5). Metric threads version available
6). Types up to 1200V VDRM/ VRRM
MAJOR RATINGS AND CHARACTERISTICS
Parameters K10RIA Unit IF(AV)   10 A @ TC 85 ℃ IF(RMS)   25 A IFSM @ 50Hz 225 A @ 60Hz 240 A I2t @ 50Hz 255 A2s @ 60Hz 233 A2s VDRM/VRRM   100 to 1200 V Tq typical 110 μs TJ   - 65 to 125 ℃
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings

 

Type number	Voltage Code	VDRM/VRRM, maximum repetitive peak reverse voltage *(1)	VRSM, maximum non- repetitive peak reverse voltage *(2)	IDRM/IRRM max. @ TJ = TJ max
		V	V	mA
K10RIA	10	100	150	20
	20	200	300	10
	40	400	500
	60	600	700
	80	800	900
	100	1000	1100
	120	1200	1300

 
 
 
2). Forward Conduction
 

Parameters		K10RIA	Unit	Conditions
IT(AV)	Max. average forward current @ Case temperature	10	A	180° conduction, half sine wave
		85	℃
IT(RMS)	Max. RMS forward current	25	A
ITSM	Max. peak, one-cycle forward, non-repetitive surge current	225	A	t = 10ms	No voltage	Sinusoidal half wave, Initial TJ = TJ max.
		240		t = 8.3ms	reapplied
		190		t = 10ms	100% VRRM
		200		t = 8.3ms	reapplied
I2t	Maximum I2t for fusing	255	A2s	t = 10ms	No voltage
		233		t = 8.3ms	reapplied
		180		t = 10ms	100% VRRM
		165		t = 8.3ms	reapplied
I2√t	Maximum I2√t for fusing	2550	A2√S	t = 0.1 to 10ms, no voltage reapplied
VT(TO)1	Low level value of threshold voltage	1.10	V	(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VT(TO)2	High level value of threshold voltage	1.39		(I > π x IF(AV)), TJ = TJ max.
rt1	Low level value of forward slope resistance	24.3	mΩ	(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rt2	High level value of forward slope resistance	16.7		(I > π x IF(AV)), TJ = TJ max.
VTM	Max. forward voltage drop	1.75	V	Ipk= 32A, TJ = 25℃ tp = 10ms sine pulse
IH	Maximum holding current	130	mA	TJ = 25°C, anode supply 12V resistive load
IL	Typical latching current	200
di/dt	Max. rate of rise of turned-on current VDRM ≤ 600V VDRM ≤ 800V VDRM ≤ 1000V VDRM ≤ 1600V		A/μs	TJ = TJ max., VDM = rated VDRM Gate pulse = 20V, 15Ω, tp = 6μs, tr = 0.1μs max. ITM = (2x rated di/dt) A
		200
		180
		160
		150
tgt	Typical turn-on time	0.9	μs	TJ = 25℃, at = rated VDRM/VRRM, TJ = 125℃
trr	Typical reverse recovery time	4		TJ = TJ max., ITM = IT(AV), p > 200μs, di/dt = -10A/μs
tq	Typical turn-off time	110		TJ = TJ max., ITM = IT(AV), tp > 200μs, VR = 100V, di/dt = -10A/μs, dv/dt = 20V/μs linear to 67% VDRM, gate bias 0V-100W
dv/dt	Max. critical rate of rise of off-state voltage	100		TJ = TJ max. linear to 100% rated VDRM
		300 (*)		TJ = TJ max. linear to 67% rated VDRM

(*) t_q = 10μsup to 600V, t_q = 30μs up to 1600V available on special request.
(**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. K16RIA120S90
 
 
3). Triggering
 

Parameters		K10RIA		Unit	Conditions
PGM	Maximum peak gate power	8.0		W	TJ = TJ max.
PG(AV)	Maximum average gate power	2.0
IGM	Max. peak positive gate current	1.5		A	TJ = TJ max.
-VGM	Maximum peak negative gate voltage	10		V	TJ = TJ max.
IGT	DC gate current required to trigger	90		mA	TJ = - 65℃	Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-to- cathode applied
		60			TJ = - 25℃
		35			TJ = - 125℃
VGT	DC gate voltage required to trigger	3.0			TJ = - 65℃
		2.0		V	TJ = - 25℃
		1.0		V	TJ = - 125℃
IGD	DC gate current not to trigger	2.0		mA	TJ = TJ max., VDRM = rated value
VGD	DC gate voltage not to trigger	0.2		V	TJ = TJ max	Max. gate current/ voltage not to trigger is the max. value which. will not trigger any unit with rated V DRM anode-to-cathode applied
					VDRM = rated value
TJ	Max. operating temperature range	- 65 to 125		℃
Tstg	Max. storage temperature range	- 65 to 125		℃
RthJC	Max. thermal resistance, junction to case	1.85		K/W	DC operation
RthCS	Max. thermal resistance, case to heatsink	0.35		K/W	Mounting surface, smooth, flat and greased
T	Mounting torque	to nut	to devic
		20(27.5)	25	lbf-in	Lubricated threads
		0.23(0.32)	0.29	kgf.m	(Non-lubricated threads)
		2.3(3.1)	2.8	Nm
wt	Approximate weight	14 (0.49)		g (oz)	See Outline Table
	Case style	TO-48

 
ΔR_thJC Conduction
(The following table shows the increment of thermal resistence R_thJC when devices operate at different conduction angles than DC)

Conduction angle	Sinusoidal conduction	Rectangular conduction	Units	Conditions
180°	0.44	0.32	K/W	TJ= TJ max.
120°	0.53	0.56
90°	0.68	0.75
60°	1.01	1.05
30°	1.71	1.73

 
  

PERFORMANCE CURVES FIGURE

Fig.1 – CurrentRatings Characteristic	Fig.2 - CurrentRatings Characteristic
Fig.3 – On-state Power Loss Characteristics
Fig.4 – On-state Power Loss Characteristics
Fig.5 –Maximum Non-Repetitive Surge Current	Fig.6 –Maximum Non-Repetitive Surge Current
Fig.7 – Forward Voltage Drop Characteristics
Fig.8 – Thermal Impedance ZthJC Characteristics
Fig.9 – Gate Characteristics

 
 
OUTLINE